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 Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification Complementary to 2SA0900
3.160.1 8.0+0.5 -0.1
Unit: mm
3.20.2
3.80.3
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 18 18 5 1 2 1.2 150 -55 to +150 Unit V V V A A W C C
0.750.1 4.60.2
0.50.1 0.50.1 2.30.2 3 1.760.1
1
2
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) VBE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 18 V, IB = 0 VCE = 2 V, IC = 500 mA VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 6 V, IE = -50 mA, f = 200 MHz VCB = 6 V, IE = 0, f = 1 MHz 150 12 90 50 100 0.5 1.2 V V MHz pF Min 18 18 5 1 10 280 Typ Max Unit V V V A A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 90 to 155 R 130 to 210 S 180 to 280
16.01.0
* Low collector-emitter saturation voltage VCE(sat) * Satisfactory operation performances and high efficiency with a lowvoltage power supply * TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
1.90.1
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
3.050.1
Features
11.00.5
Publication date: January 2003
SJD00093BED
1
2SC1568
PC Ta
6
1.2
(1)With a 100x100x2mm Al heat sink (2)Without heat sink Class B push pull
TC=25C
IC VCE
1.2
IC I B
VCE=2V TC=25C
Collector power dissipation PC (W)
5
1.0
IB=5.0mA 4.5mA 4.0mA
1.0
4
(1)
Collector current IC (A)
2.0
Collector current IC (A)
0.8
0.8
3
0.6
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
0.6
2
(2)
0.4
0.4
1
0.2
0.2
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
0
0
2
4
6
8
10
12
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=20
IC/IB=10
hFE IC
VCE=2V
10
1000
Forward current transfer ratio hFE
TC=100C -25C
1
1
TC=100C -25C 25C
100
25C
TC=100C
0.1
25C
-25C
0.1
10
0.01 0.01
0.1
1
0.01 0.01
0.1
1
1 0.01
0.1
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
200
VCB=6V f=200MHz TC=25C
Cob VCB
50
IE=0 f=1MHz TC=25C
ICBO Ta
104
VCB=10V
Transition frequency fT (MHz)
40
150
103
30
ICBO (Ta) ICBO (Ta = 25C)
1 10 100
100
102
20
50
10
10
0 -1
-10
-100
0
1
0
40
80
120
160
Emitter current IE (mA)
Collector-base voltage VCB (V)
Ambient temperature Ta (C)
2
SJD00093BED
2SC1568
ICEO Ta
105
VCE=18V
Safe operation area
10
Single pulse TC=25C ICP
104
Collector current IC (A)
1
t=10ms IC DC t=1s
ICEO (Ta) ICEO (Ta = 25C)
103
0.1
102
0.01
10
1
0
40
80
120
160
0.001 0.1
1
10
100
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
SJD00093BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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